IN-SITU DETECTION OF REARRANGEMENT PROCESSES DURING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INP

Ion implantation and short-time electron beam annealing can be used as precise and reproducible tool for introducing controlled quantities o f impurities into semiconductors. Measurement of the thermal radiation of ion implanted samples during the electron beam tempering process a llows the in situ detection of changes in the surface structure and ch arge carrier density. In contrast to temperature controlled annealing methods, it is therefore possible to precisely control the annealing b y the detection of rearrangement processes. We exemplify the method by the activation and diffusion of P during the temperature treatment fo r the well-known system of P implanted Si [2]. Furthermore, tempering of semi-insulating as well as of Mg+ implanted InP by means of electro n beam irradiation is presented.