DISORDER IN HIGH-DOSE, HIGH-ENERGY O-IMPLANTED AND SI-IMPLANTED SI

To aid in deducing the mechanisms of disorder formation during SIMOX s ubstrate fabrication, Si substrates were implanted with O or Si ions a t similar doses (1-2 x 10(18)/cm2) and energies (I MeV). Differences i n the areal vacancy density (the product of the implanted ion dose and the total vacancy production per ion) required to form a buried amorp hous layer were apparent for O- and Si-implanted samples due to the hi gh O-impurity concentration and consequential compound formation (SiO2 ) in the former. Within the bulk, dislocation formation was nonlinear with areal vacancy density while in the near-surface region, anomalous dislocation generation was apparent over an implant temperature range of 150-450-degrees-C for both O- and Si-implanted samples.