INCORPORATION OF IN INTO SI PREAMORPHIZED WITH SI, GE AND SN

Implantation into preamorphized layers is a well known method used to fabricate devices by avoiding channeling tails of implanted dopants. S ince the quality of the regrowth depends on the ion species used for t he preamorphization, we studied the incorporation of In into Si, pream orphized by Si, Ge and Sn implants. The perturbed gamma-gamma angular correlation (PAC) method was used to monitor the recrystallisation of the lattice in the vicinity of the In-111 probe atoms via the electric field gradients produced at the site of the In nucleus by the surroun ding lattice disorder. Annealing for 10 min in vacuum at 733 and 923 K led to a recovery of the lattice structure in all three cases. Howeve r, considerable differences were observed depending on the preimplante d element.