THE ACTIVATION-ENERGY OF ELECTRICAL-CONDUCTION OF ION-BEAM MIXED SB N-SI SCHOTTKY CONTACTS/

Using I-V measurements, the electrical characteristics of Sb/n-Si Scho ttky contacts were determined after silicon ion bombardment to dose de nsities from 5 x 10(13) up to 1 x 10(16) Si+ cm-2. It was found that t he conductivity of the contacts between 20 and 100-degrees-C can be fi tted to Arrhenius plots. The activation energy, determined from these plots, was 0.35 +/- 0.05 eV, independent of dose density and of contac t size. Alpha-particle channeling measurements showed significant stru ctural changes between contacts which were ion bombarded to different doses. Below 5 x 10(14) Si+ cm-2 no measurable amorphization occurred, while for dose densities phi greater-than-or-equal-to 5 x 10(14) Sicm-2, the silicon substrates were progressively amorphized. RBS measur ements showed that very little mixing took place. A theoretical analys is agrees with this result indicating that the main mixing mechanism i s due to ballistic processes.