PROPERTIES OF MN(+)-IMPLANTED GAAS

Properties of Mn+-implanted GaAs have been investigated by means of ph otoluminescence (PL) spectroscopy and Raman scattering. Mn-related rad iative recombinations have been observed at lambda = 880 nm (1.41 eV) from the samples ([Mn] = 1 x 10(17)-1 x 10(21) cm-3) annealed by a con ventional furnace annealing process. Excitation dependence of such emi ssions indicates that the emissions at lambda almost-equal-to 880 nm o bserved from the samples with [Mn] less-than-or-equal-to 1 x 10(19) cm -3 are attributed to the mixture of conduction band to Mn acceptor and residual donor to Mn acceptor pair transitions. The samples with [Mn] = 1 x 10(20) and 1 x 10(21) cm-3 showed a peak at lambda almost-equal -to 880 nm, in addition, an undefined broad emission appeared in the w avelength range near the above mentioned peaks and blue-shifted with i ncreasing excitation power, suggesting that the origin of the radiativ e recombinations observed at lambda = 880 nm may be quite different in the lightly and heavily doped specimens.