ION-IMPLANTED ARSENIC IN SILICON

Authors
LARSEN AN CHRISTENSEN B CHRISTENSEN PH SHIRYAEV SY
Citation
An. Larsen et al., ION-IMPLANTED ARSENIC IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 697-701
Citations number
17
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
697 - 701
Database
ISI
SICI code
0168-583X(1993)80-1:<697:IAIS>2.0.ZU;2-Z
Abstract
The behaviour of high concentration ion implanted arsenic in silicon d uring high temperature annealing has been studied. It is found that th e cooling rate following high temperature annealing has a pronounced e ffect on the maximum carrier concentration which can be obtained at a given temperature, and it is demonstrated that the equilibrium carrier concentration at a given temperature is higher than the previously ac cepted value. The anomalous, enhanced diffusion for arsenic concentrat ions exceeding approximately 2 x 10(20) cm-3 is successfully modelled within the vacancy-percolation model, and it is concluded that collect ive phenomena play a significant role in the diffusion at high donor c oncentrations.