STRUCTURAL AND OPTICAL CHARACTERIZATION OF IMPLANTED AND ANNEALED SEMIINSULATING GAAS

The structural and optical properties of SI GaAs crystals implanted wi th Se, Si and Be ions have been studied. The implanted fluences ranged from 10(12) to 10(15) cm-2 at energies of 2.3 MeV (Be), 7 MeV (Si) an d 10.9 MeV (Se), producing buried damaged layers centered at a depth o f about 3 mum. Changes in the lattice constant were measured by XRD an d the corresponding strain and damage profiles were determined and cor related with estimates of damage obtained from the results of channeli ng-RBS measurements. Both photolumineSCence and Raman measurements wer e used to probe the damage as a function of depth with the aid of a sh allow bevel produced by chemical etching. All measurements indicate a maximum of damage around 3 mum. Except for a region at the end of rang e, the crystal structure of p+ Be-doped GaAs has recovered its origina l quality upon annealing.