LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP

Authors
MULLER P WESCH W SOLOVYEV VS GAIDUK PI WENDLER E KOMAROV FF GOTZ G
Citation
P. Muller et al., LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 721-725
Citations number
13
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
80-1
Year of publication
1993
Part
1
Pages
721 - 725
Database
ISI
SICI code
0168-583X(1993)80-1:<721:LROII>2.0.ZU;2-5
Abstract
The low temperature recrystallization behaviour of completely amorphiz ed InP layers is investigated by means of RBS channeling and TEM measu rements in the temperature region 150 to 400-degrees-C as a function o f the annealing time. The resulting layers consist of a well annealed and a defective near surface layer containing a high density of microt wins. The thickness of the well annealed region increases with the ann ealing time and reaches a saturation value which depends on the temper ature and is independent of the thickness of the initial amorphous lay er. With increasing temperature the time to reach the saturation value decreases.