ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES

Authors
POINDEXTER EH RONG FC BUCHWALD WR GERARDI GJ KEEBLE DJ WARREN WL
Citation
Eh. Poindexter et al., ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 119-125
Citations number
31
Categorie Soggetti
Chemistry Physical
Journal title
Colloids and surfaces. A, Physicochemical and engineering aspects → ACNP
ISSN journal
09277757
Volume
72
Year of publication
1993
Pages
119 - 125
Database
ISI
SICI code
0927-7757(1993)72:<119:EMNTPN>2.0.ZU;2-7
Abstract
Hyperfine structure has beep observed in the electrically-detected mag netic resonance signal from a silicon p-n junction diode. By comparing the g value, hyperfine parameters, and bandgap energy level with know n species having suitable abundances of isotopes with I = 1/2, the cen ter is tentatively assigned as a platinum moiety, of presently undeter mined structure. The observation indicates the usefulness of EDMR in t he study of defects in ultrasmall Si devices, and raises certain quest ions regarding the current theories of spin-dependent recombination.