BORON-NITRIDE THIN-FILMS ON SI(100) BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
DEVI GS ROY S RAO VJ
Citation
Gs. Devi et al., BORON-NITRIDE THIN-FILMS ON SI(100) BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Solid state communications, 87(1), 1993, pp. 67-70
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
87
Issue
1
Year of publication
1993
Pages
67 - 70
Database
ISI
SICI code
0038-1098(1993)87:1<67:BTOSBM>2.0.ZU;2-0
Abstract
Crystalline boron nitride thin films have been deposited on silicon su bstrates by MO-CVD at different temperatures using a single source III -V precursor in N2 ambient. The deposited films are characterized by X RD and IR techniques. XRD confirms that the films are mostly polycryst alline with (111), (200), (004), (103) oriented cubic and hexagonal ph ases of boron nitride. IR also shows a mixture of cubic and nexagonal boron nitride phases.