K. Waragai et al., FET CHARACTERISTICS OF SUBSTITUTED OLIGOTHIOPHENES WITH A SERIES OF POLYMERIZATION DEGREES, Synthetic metals, 57(1), 1993, pp. 4053-4058
FET measurements have been carried out at various temperatures and ele
ctric fields using substituted oligothiophenes. The highest mobility a
chieved was about 10(-2) cm2/Vs for dimethylsexithlophene. The charge
transport in the FET configurations can be interpreted in terms of hop
ping of polarons.