THE IV CHARACTERISTICS OF THE GAS-PHASE DOPED COPPER PHTHALOCYANINE SI HETEROJUNCTIONS/

The heterojunction properties of Copper Phthalocyanine(CuPc) evaporate d on n-type or p-type silicon are investigated using I-V measurements. The CuPc was doped with oxygen, NO(x), or iodine, respectively, via t he gaseous phase doping. For the anisotope heterojunction of CuPc/n-Si , the ideality factor is about 2 for all dopants and the current incre ases upon doping. But for the isotope heterojunctions of CuPc/p-Si, th e junction properties are very sensitive to each dopant.