STUDY OF PHOTOELECTRIC CHARACTERISTICS OF P-PAN N-SI JUNCTION/

A p-type polyaniline (PAn) film was photoelectrochemically polymerized directly on a n/n+ epitaxial silicon (Si) wafer in electrolyte and a p-PAn/n-Si junction was fabricated. The photocurrent and photovoltage can be clearly seen in the I(p)-V curve of the junction. It is demonst rated experimentally that the photocurrent spectrum of p-PAn/n-Si junc tion and the transmission spectrum of p-PAn film occur in same range o f photon energy 1.8 - 2.8 eV, and it means that the PAn film in the ju nction offers a window for photons of 1.8 - 2.8 eV. The energy band st ructure and the photoelectric transformation process of the p-PAn/n-Si junction have been analyzed, and some factors affecting the photoelec tric characteristics of p-PAn/n-Si junctions have been discussed in th is paper.