A KINETIC-MODEL FOR PHOTOENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION

Authors
SALZMAN J MAAYAN E
Citation
J. Salzman et E. Maayan, A KINETIC-MODEL FOR PHOTOENHANCED ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION, Semiconductor science and technology, 8(6), 1993, pp. 1094-1100
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Pages
1094 - 1100
Database
ISI
SICI code
0268-1242(1993)8:6<1094:AKFPOC>2.0.ZU;2-Y
Abstract
A kinetic model for chemisorption, dissociation and reaction of non-py rolysed organometallic species on the surface of a semiconductor is pr esented. Surface recombination of photogenerated electronic carriers c an assist the epitaxial growth process. Enhancement of the various rat e coefficients produced by the localized energy release of surface rec ombination events, and its implications for the overall growth rate ar e discussed.