Rw. Martin et al., THE DESIGN OF QUANTUM-CONFINED STARK-EFFECT MODULATORS FOR INTEGRATION WITH 1.55 MU-M LASERS, Semiconductor science and technology, 8(6), 1993, pp. 1173-1178
Various factors affecting the design of an optical modulator based on
the quantum-confined Stark effect and suitable for integration with a
1.55 mum InGaAs(P) laser are considered. Multiple quantum well (MQW) s
tructures comprising various combinations of InP, InGaAs, InGaAsP and
InGaAlAs materials are considered both theoretically and experimentall
y. Calculations of Stark shifts and overlap integrals, as functions of
applied electric field, are used to assess the potential for modulato
r performance. A quaternary/quaternary system is shown to give the bes
t performance at the wavelength of interest and this has been demonstr
ated using MOVPE-grown structures. The calculations of Stark shifts an
d wavefunction localization have also been employed to assess the opti
mum layer thicknesses in the MQW and are compared with photocurrent da
ta.