SELECTIVE-AREA EPITAXY FOR GAAS-ON-INP OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)

Long-wavelength optoelectronic integrated circuits (OEICS) will be imp ortant components for future telecommunications systems, for example a s low-cost optical receivers or as nodes on high-speed optical network s. This paper reports the application of selective-area epitaxy (SAE) to the fabrication of monolithic GaAs-on-InP, long-wavelength OEICS in corporating optical detectors and transmitters together with digital a nd analogue electronics. We believe that this approach has produced th e highest functionality long-wavelength OEICS fabricated to date.