ADVANTAGES OF AN ALTERNATING-CURRENT INDUCED BY AN ELECTRON-BEAM IN DETERMINATION OF SEMICONDUCTOR PARAMETERS

Authors
ROMANOWSKI A
Citation
A. Romanowski, ADVANTAGES OF AN ALTERNATING-CURRENT INDUCED BY AN ELECTRON-BEAM IN DETERMINATION OF SEMICONDUCTOR PARAMETERS, Semiconductors, 27(3), 1993, pp. 207-209
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
3
Year of publication
1993
Pages
207 - 209
Database
ISI
SICI code
1063-7826(1993)27:3<207:AOAAIB>2.0.ZU;2-N
Abstract
The influence of trapping centers on the phase shift of a short-circui t current generated by a point source has been analyzed. The maximum p hase is shown to correspond to the emission coefficient. The parameter s of minority-carrier trapping centers, which are associated with copp er implanted in a shallow n+-p junction, have been measured by using a lternating currents induced by incident light and by an electron beam.