A. Romanowski, ADVANTAGES OF AN ALTERNATING-CURRENT INDUCED BY AN ELECTRON-BEAM IN DETERMINATION OF SEMICONDUCTOR PARAMETERS, Semiconductors, 27(3), 1993, pp. 207-209
The influence of trapping centers on the phase shift of a short-circui
t current generated by a point source has been analyzed. The maximum p
hase is shown to correspond to the emission coefficient. The parameter
s of minority-carrier trapping centers, which are associated with copp
er implanted in a shallow n+-p junction, have been measured by using a
lternating currents induced by incident light and by an electron beam.