THEORY OF PHOTOVOLTAIC EFFECTS IN N-TYPE GAP

Citation
Ry. Rasulov et al., THEORY OF PHOTOVOLTAIC EFFECTS IN N-TYPE GAP, Semiconductors, 27(3), 1993, pp. 209-215
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
3
Year of publication
1993
Pages
209 - 215
Database
ISI
SICI code
1063-7826(1993)27:3<209:TOPEIN>2.0.ZU;2-D
Abstract
The photon mechanism of the linear ballistic and displacement photovol taic effects has been studied theoretically. This mechanism is based r espectively on an asymmetry of the probability of optical transitions between the X1 and X3 conduction subbands of n-type GaP in which long- wavelength phonons participate and on a displacement of carriers in re al space in the course of quantum transitions. The drag of electrons b y photons in n-type GaP due to indirect intersubband optical transitio ns, with allowance for the photon momentum, has been studied. The theo retical results are compared with experimental data.