PROPERTIES OF EPITAXIAL INDIUM ARSENIDE DOPED WITH RARE-EARTH ELEMENTS

A study was made of electrical and photoelectric properties of epitaxi al indium arsenide films grown by the method of liquid phase epitaxy a nd doped with rare-earth elements (ytterbium and gadolinium) and also with rare earths in combination with lead, which was used as a neutral solvent. Doping with rare earths produced effects in many ways simila r to those of lead: The donor concentration decreased because of bindi ng of shallow impurities. At the optimal rare-earth concentration a pu re material with an electron density n = 6 X 10(15) cm-3 and a mobilit y (at 77 K) mu77 = 91 000 cm2 (V . s) was obtained. Doping with a rare earth and Pb produced a strongly compensated material with an electro n density n = 22 X 10(15) cm-3.