MASSES OF QUANTUM-SIZE HOLE SUBBANDS OF SEMICONDUCTOR HETEROSTRUCTURES WITH DIFFERENT ORIENTATIONS

Analytic expressions have been obtained for the effective masses in qu antum-size hole subbands of heterostructure semiconductors with a dege nerate valence band. Corrugation of the hole spectrum in stressed quan tum layers of different orientations is taken into account. The depend ence of the subband dispersion on the direction of growth of a heteros tructure, on the jump of the valence band edge at the heterojunction, on the layer thickness, and on the strains in the layers has been anal yzed. The effect of corruptions and strains on the behavior of the sub band masses near a semiconductor-semimetal-semiconductor transition in CdTe-HgTe heterostructures has been determined.