DENSITY OF ELECTRON-STATES OF INTRINSIC HYDROGENATED AMORPHOUS-SILICON

The results of experimental studies of the density of states g(epsilon ) Of ''intrinsic'' a-Si:H by the method of a space-charge-limited phot oinduced current flowing in structures with a Schottky barrier are pre sented. In the upper half of the mobility gap E(g) [from epsilon(c) to (epsilon(c)-E(g)/2)] the density g(epsilon) obtained by this method a grees with the density g(epsilon) plotted as g(epsilon(F)) for a serie s of psuedodoped samples (with a varying position of the Fermi level e psilon(F)). Psuedodoping was found to be linked with an increase in g( epsilon) in the lower half of the mobility gap [between epsilon(v) and (epsilon(v)+E(g)/2)].