PHOTOINDUCED DEFECTS IN PSEUDODOPED A-SIH

The properties of pseudodoped a-Si:H samples before and after prolonge d illumination have been studied. The initial position of the Fermi le vel relative to the conduction band edge at 300 K was epsilon(c) - eps ilon(F) = 0.44-0.92 eV, depending on the sample. The relationships gov erning an increase in the concentration of dangling bonds, the values of the shifts of epsilon(F), and the changes in the photoconductivity after illumination as a function of the initial position of epsilon(F) , have been determined. The ''intrinsic'' a-Si:H, which was obtained b y the pseudodoping method, was found to have a higher stability becaus e of the minimum number of the dangling and weak Si-Si bonds.