ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD

Authors
MUSIKHIN SF NEMOV SA PROSHIN VI SEMIN IE SHAMSHUR DV BEREZIN AV IMAMKULIEV SD
Citation
Sf. Musikhin et al., ELECTRICAL-PROPERTIES OF (SN0.8GE0.2)1-XINXTE FILMS FORMED BY A LASER-EVAPORATION METHOD, Semiconductors, 27(3), 1993, pp. 288-290
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
3
Year of publication
1993
Pages
288 - 290
Database
ISI
SICI code
1063-7826(1993)27:3<288:EO(FFB>2.0.ZU;2-U