WHY THE LOW-TEMPERATURE MOBILITY OF ELECTRONS IN HGSEFE IS CONSTANT

Authors
KULEEV IG LERINMAN NK LYAPILIN II SABIRZYANOVA LD TSIDILKOVSKII IM
Citation
Ig. Kuleev et al., WHY THE LOW-TEMPERATURE MOBILITY OF ELECTRONS IN HGSEFE IS CONSTANT, Semiconductors, 27(3), 1993, pp. 292-293
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
3
Year of publication
1993
Pages
292 - 293
Database
ISI
SICI code
1063-7826(1993)27:3<292:WTLMOE>2.0.ZU;2-D