VIRTUAL AND REAL AS4 STICKING COEFFICIENT DURING THE MOLECULAR-BEAM EPITAXY OF GAAS

A new physical approach is proposed to deal with the recently reported observations of As4 sticking coefficients greater than 0.5. Our exper imental results and their discussion indicate a possible source of err or in the controversies about its maximum value. According to our theo ry, the generally accepted value of 0.5 as the maximum (steady state) sticking coefficient for As4 on GaAs in MBE growth need not be revised .