UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH

Authors
BERTRU N NOUAOURA M BONNET J LASSABATERE L BEDEL E MUNOZYAGUE A
Citation
N. Bertru et al., UV AND OZONE CLEANING OF GASB (100) SURFACES PRIOR TO MBE GROWTH, Applied surface science, 68(3), 1993, pp. 357-359
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
68
Issue
3
Year of publication
1993
Pages
357 - 359
Database
ISI
SICI code
0169-4332(1993)68:3<357:UAOCOG>2.0.ZU;2-7
Abstract
The formation of sacrificial oxides by UV-ozone exposure on GaAs and I nP is a well established procedure in the preparation of clean substra tes for MBE growth. We describe a UV-ozone treatment used to prepare G aSb(100) substrates and report results obtained by Auger (Auger electr on spectroscopy) which show that the quality of the so prepared substr ates is excellent for MBE (molecular beam epitaxy).