APPARENT RECOVERY EFFECT OF HYDROGENATED PD-ON-GAAS (N-TYPE) SCHOTTKYINTERFACE BY FORWARD CURRENT AT LOW-TEMPERATURE

The hydrogen-induced charge in the hydrogenated Pd-on-GaAs (n-type) Sc hottky interface was observed to diminish upon application of forward current at low temperature. This apparent recovery disappears when the sample is heated towards room temperature, that is, the hydrogen-indu ced charge is reobserved without additional hydrogenation. Thus, it is conceivable that this apparent recovery eff ect is not due to the rem oval of the hydrogen, but to variation of the charge state of the hydr ogen due to the trapping of the electrons.