MEDIUM-ENERGY ION SPECTROSCOPY USING ION IMPLANTER

An ion-implanter-based medium-energy ion spectroscopy system equipped with a solid-state detector has been developed and its performance has been studied with respect to an ultrathin gold layer/Si(110) system a nd arsenic-implanted silicon layers. The energy spectra have been take n at an incident He+ ion energy of less than 200 keV. A very thin laye r of silicon migrating through the Au layer during low-temperature ann ealing has been detected. It, is demonstrated that arsenic atoms impla nted at a dose of 4 x 10(13) cm-2 are clearly observable. The disorder ed silicon layer induced by 14 keV As+ ion implantation with a dose of 2.3 x 10(12) cm-2 has also been detected.