An ion-implanter-based medium-energy ion spectroscopy system equipped
with a solid-state detector has been developed and its performance has
been studied with respect to an ultrathin gold layer/Si(110) system a
nd arsenic-implanted silicon layers. The energy spectra have been take
n at an incident He+ ion energy of less than 200 keV. A very thin laye
r of silicon migrating through the Au layer during low-temperature ann
ealing has been detected. It, is demonstrated that arsenic atoms impla
nted at a dose of 4 x 10(13) cm-2 are clearly observable. The disorder
ed silicon layer induced by 14 keV As+ ion implantation with a dose of
2.3 x 10(12) cm-2 has also been detected.