Dg. Seiler et al., HG1-XCDXTE CHARACTERIZATION MEASUREMENTS - CURRENT PRACTICE AND FUTURE-NEEDS, Semiconductor science and technology, 8(6), 1993, pp. 753-776
An extensive industrial survey of the importance and use of characteri
zation measurements for HgCdTe materials, processes and devices has be
en completed. Seventy-two characterization/measurement techniques were
considered and thirty-five responses were received. This information
was sought for a study on materials characterization and measurement t
echniques of parameters and properties necessary to improve the manufa
cturing capabilities of HgCdTe infrared detectors. The nature of mater
ials characterization is defined, and an overview is given of how it i
s related to improving IR detector manufacturing. Finally, we present
a description of the characterization survey and a summary of the surv
ey results. Major aspects of the results include: (1) ranking the 72 t
echniques by their importance and frequency of use, (2) listing the pa
rameters or properties determined by each technique, (3) enumerating t
he most important properties that need to be measured, (4) indicating
the key measurement techniques that most need to be developed, enhance
d or improved, and (5) giving key overall comments.