HG1-XCDXTE CHARACTERIZATION MEASUREMENTS - CURRENT PRACTICE AND FUTURE-NEEDS

Citation
Dg. Seiler et al., HG1-XCDXTE CHARACTERIZATION MEASUREMENTS - CURRENT PRACTICE AND FUTURE-NEEDS, Semiconductor science and technology, 8(6), 1993, pp. 753-776
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Supplement
S
Pages
753 - 776
Database
ISI
SICI code
0268-1242(1993)8:6<753:HCM-CP>2.0.ZU;2-4
Abstract
An extensive industrial survey of the importance and use of characteri zation measurements for HgCdTe materials, processes and devices has be en completed. Seventy-two characterization/measurement techniques were considered and thirty-five responses were received. This information was sought for a study on materials characterization and measurement t echniques of parameters and properties necessary to improve the manufa cturing capabilities of HgCdTe infrared detectors. The nature of mater ials characterization is defined, and an overview is given of how it i s related to improving IR detector manufacturing. Finally, we present a description of the characterization survey and a summary of the surv ey results. Major aspects of the results include: (1) ranking the 72 t echniques by their importance and frequency of use, (2) listing the pa rameters or properties determined by each technique, (3) enumerating t he most important properties that need to be measured, (4) indicating the key measurement techniques that most need to be developed, enhance d or improved, and (5) giving key overall comments.