THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTORTECHNOLOGY

Authors
REINE MB MASCHHOFF KR TOBIN SP NORTON PW MROCZKOWSKI JA KRUEGER EE
Citation
Mb. Reine et al., THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTORTECHNOLOGY, Semiconductor science and technology, 8(6), 1993, pp. 788-804
Citations number
69
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Supplement
S
Pages
788 - 804
Database
ISI
SICI code
0268-1242(1993)8:6<788:TIOCTO>2.0.ZU;2-G
Abstract
This paper reviews those characterization techniques that have played significant roles in the development of HgCdTe infrared detector techn ology. We focus on the two specific HgCdTe devices that have achieved widespread application for infrared detection in the LWIR (8-12 mum) a nd VLWIR (12-20 mum) spectral regions: the simple n-type photoconducto r and the P-on-n LPE heterojunction photodiode. We review the device p hysics of these two detectors, relate device performance to starting m aterial properties and processing parameters, and describe the most im portant characterization techniques that have had a role in their deve lopment.