MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE

Citation
Vc. Lopes et al., MINORITY-CARRIER LIFETIME IN MERCURY CADMIUM TELLURIDE, Semiconductor science and technology, 8(6), 1993, pp. 824-841
Citations number
92
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Supplement
S
Pages
824 - 841
Database
ISI
SICI code
0268-1242(1993)8:6<824:MLIMCT>2.0.ZU;2-D
Abstract
This paper reviews the current status of minority carrier lifetime in n-type and p-type (Hg, Cd)Te. This review includes a discussion of the relevant (Hg, Cd)Te recombination mechanisms and measurement techniqu es. The reported experimentally determined lifetimes were related to ( Hg, Cd)Te material properties of carrier concentration, Shockley-Read- Hall centres, non-uniformities and dislocation densities.