This paper reviews the current status of minority carrier lifetime in
n-type and p-type (Hg, Cd)Te. This review includes a discussion of the
relevant (Hg, Cd)Te recombination mechanisms and measurement techniqu
es. The reported experimentally determined lifetimes were related to (
Hg, Cd)Te material properties of carrier concentration, Shockley-Read-
Hall centres, non-uniformities and dislocation densities.