Gl. Carr et al., NOVEL TECHNIQUES FOR CHARACTERIZING DETECTOR MATERIALS USING PULSED INFRARED SYNCHROTRON-RADIATION, Semiconductor science and technology, 8(6), 1993, pp. 922-927
The VUV ring at the National Synchrotron Light Source (NSLS, Brookhave
n National Laboratory) is a source of nanosecond-duration, high-bright
ness, broadband IR pulses. We are developing several measurement techn
iques for characterizing Hg1-xCdxTe and other IR detector materials us
ing this source. For example, the broadband IR pulses can be used to s
tudy transient photoconductive decay at various photon energies near t
he bandgap. A particularly novel technique we have developed is far-in
frared photoinduced nanosecond spectroscopy (FIR-PINS). In this all-op
tical (contactless) measurement, a short laser pulse generates photoca
rriers which are subsequently sensed by a far-infrared pulse from the
synchrotron. Spectroscopic analysis of the far-infrared yields the fre
e carrier plasma frequency, providing information on the photocarrier
density. By varying the delay time of the far-infrared pulse (relative
to the laser pulse), the photocarrier relaxation is determined with n
anosecond resolution. In addition to being contactless, the technique
offers other potential advantages over electrical measurements. Result
s for MBE-grown Hg1-xCdxTe are presented.