NONDESTRUCTIVE CHARACTERIZATION OF HGCDTE USING PHOTOINDUCED MICROWAVE REFLECTION

Authors
SPADA EJ RAO VR BHAT I BORREGO JM
Citation
Ej. Spada et al., NONDESTRUCTIVE CHARACTERIZATION OF HGCDTE USING PHOTOINDUCED MICROWAVE REFLECTION, Semiconductor science and technology, 8(6), 1993, pp. 936-940
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Supplement
S
Pages
936 - 940
Database
ISI
SICI code
0268-1242(1993)8:6<936:NCOHUP>2.0.ZU;2-#
Abstract
In this paper we present the details of a photoinduced microwave refle ctance set-up operating at 35 GHz for measuring the excess carrier lif etime and surface recombination velocity of semiconductor epitaxial la yers or bulk wafers. The principles upon which the operation of the se t-up is based are given in detail, pointing out those situations in wh ich the measurements can give erroneous results. Evaluation of HgCdTe epitaxial layers grown in our laboratory by MOCVD on semi-insulating C dTe substrates have shown excess carrier lifetimes of 1.1 mus and a su rface recombination velocity of 1400 cm s-1 at 77 K.