INFRARED PHOTOLUMINESCENCE CHARACTERIZATION OF LONG-WAVELENGTH HGCDTEDETECTOR MATERIALS

Authors
KURTZ SR BAJAJ J EDWALL DD IRVINE SJC
Citation
Sr. Kurtz et al., INFRARED PHOTOLUMINESCENCE CHARACTERIZATION OF LONG-WAVELENGTH HGCDTEDETECTOR MATERIALS, Semiconductor science and technology, 8(6), 1993, pp. 941-945
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
6
Year of publication
1993
Supplement
S
Pages
941 - 945
Database
ISI
SICI code
0268-1242(1993)8:6<941:IPCOLH>2.0.ZU;2-S
Abstract
Using a double-modulation, infrared photoluminescence technique, we ha ve examined a variety of long-wavelength, HgCdTe materials under devel opment for focal-plane array applications. Near-bandgap photoluminesce nce was easily observed in 'good quality' HgCdTe at 77 K, and we demon strate the feasibility of using this technique for routine characteriz ation of HgCdTe prior to device processing. Information regarding mino rity carrier lifetime, compositional uniformity, and native defects is obtained from photoluminescence data.