LOW-TEMPERATURE FABRICATION OF AMORPHOUS BATIO3 THIN-FILM BYPASS CAPACITORS

Amorphous BaTiO3 thin-film capacitors suitable for integration into mu ltichip module (MCM) packaging process were fabricated. The multilayer capacitor structure consisted of an adhesion layer (TiO(x)N(y) or Ti) , a bottom electrode (Cu), a dielectric (amorphous BaTiO3), and a top electrode (Cu). A 3000-angstrom amorphous BaTiO3 film was deposited on to the electrode by the reactive partially ionized beam (RPIB) techniq ue at near room temperature. After a 300-degrees-C post-deposition ann eal, the capacitors had the following properties: epsilon(r) 17-18 and tandelta < 0.01 up to 600 MHz, J(leak) = 0.06-0.5 muA/cm2 at 0.5 MV/c m, and breakdown field E(max) = 3.3 MV/cm.