LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION

Authors
KIM YS OKADA Y CHANG KM TOBIN PJ MORTON B CHOE H BOWERS M KUO C CHRUDIMSKY D AJURIA SA YEARGAIN JR
Citation
Ys. Kim et al., LOW-DEFECT-DENSITY AND HIGH-RELIABILITY FETMOS EEPROMS FABRICATED USING FURNACE N2O OXYNITRIDATION, IEEE electron device letters, 14(7), 1993, pp. 342-344
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
7
Year of publication
1993
Pages
342 - 344
Database
ISI
SICI code
0741-3106(1993)14:7<342:LAHFEF>2.0.ZU;2-V
Abstract
The superior characteristics of floating-gate electron tunneling MOS ( FETMOS) EEPROM's fabricated using a furnace N2O oxynitridation process are described in this paper. These devices exhibited about 8 times be tter endurance and good data retention characteristics while maintaini ng defect density comparable to that of the control thermal oxide devi ces. These devices also showed very good thickness uniformity across t he wafer and wafer-to-water.