ARSENIC SOURCE AND DRAIN IMPLANT INDUCED DEGRADATION OF SHORT-CHANNELEFFECTS IN NMOSFETS

Boron is found to segregate readily from the channel region into the a rsenic implanted source/drain regions during the As activation anneal. The resulting boron depletion around the source and drain locally low ers the surface potential required for inversion and contributes subst antially to the V(T) rolloff and drain-induced barrier lowering (DIBL) in subquarter-micrometer NMOSFET's. This boron redistribution origina tes from the As implantation damage in the source and drain regions.