EPITAXIAL LITAO3 THIN-FILMS BY PULSED-LASER DEPOSITION

Citation
Ja. Agostinelli et al., EPITAXIAL LITAO3 THIN-FILMS BY PULSED-LASER DEPOSITION, Applied physics letters, 63(2), 1993, pp. 123-125
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
2
Year of publication
1993
Pages
123 - 125
Database
ISI
SICI code
0003-6951(1993)63:2<123:ELTBPD>2.0.ZU;2-R
Abstract
Epitaxial LiTaO3 thin films having excellent crystalline properties ha ve been achieved on (0001)-sapphire substrates using the technique of pulsed laser deposition. X-ray diffraction analysis revealed that comp letely single-phase c-oriented LiTaO3 films were produced. X-ray rocki ng curve analysis showed that the range of misalignment of the c-axis direction was about 0.2-degrees. Ion channeling studies indicated a mi nimum backscattering yield of only 4.9%. Channeling also revealed an i mprovement in crystalline perfection as a function of distance above t he interface with the sapphire substrate. Optical waveguiding with los ses on the order of 1 dB/cm was demonstrated.