NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS

Authors
LIU CR FANG YK CHEN KH HWANG JD KUO LC
Citation
Cr. Liu et al., NOVEL AMORPHOUS-SILICON DOPING SUPERLATTICE DEVICE WITH BIDIRECTIONALS-SHAPED NEGATIVE DIFFERENTIAL CHARACTERISTICS, Applied physics letters, 63(2), 1993, pp. 177-179
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
2
Year of publication
1993
Pages
177 - 179
Database
ISI
SICI code
0003-6951(1993)63:2<177:NADSDW>2.0.ZU;2-Q
Abstract
A novel amorphous silicon doping superlattice device with bidirectiona l S-shaped negative-differential characteristics has been fabricated a nd investigated experimentally. The occurrence of the S-shaped switchi ng phenomenon is caused by the potential redistribution due to the ava lanche multiplication process. The experimental results are demonstrat ed and the electronic transport theory is proposed in this letter.