DEEP HOLE TRAP PROPERTIES OF P-TYPE ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

The characteristics of deep hole traps in p-type ZnSe are studied by m eans of a transient capacitance spectroscopy technique. p-type ZnSe la yers were grown by molecular beam epitaxy using radical N2 (nitrogen) doping. A major deep hole trap with a thermal hole activation energy o f DELTAE= 720 +/- 30 meV is detected for two different sample structur es: (a) n+-p ZnSe diodes and (b) Au-p ZnSe double-Schottky diodes. The trap concentration tends to increase as the net acceptor (N) concentr ation increases. The deep hole trap has revealed an exponential temper ature dependence of hole capture rates, indicating a strong electron-l attice coupling in carrier capture/emission processes.