RELATIONSHIP BETWEEN GROWTH-CONDITIONS, NITROGEN PROFILE, AND CHARGE TO BREAKDOWN OF GATE OXYNITRIDES GROWN FROM PURE N2O

We studied the relationship between the growth conditions, the nitroge n profile, and the charge to breakdown of N2O oxynitrides grown in a R TP and in a conventional furnace. RTP oxynitride shows nitrogen accumu lation at the Si/SiO2 interface. On the other hand, furnace oxynitride shows almost uniform nitrogen distribution in the bulk, resulting in poor charge to breakdown characteristics. We find that two-step oxynit ridation processes provide nitrogen accumulation at the Si/SiO2 interf ace and result in better electrical properties than those of one-step oxynitrides.