LIQUID-PHASE EPITAXY CENTRIFUGE FOR 100 MM DIAMETER SI SUBSTRATES

In a novel centrifuge, we perform silicon liquid-phase epitaxy (LPE) o n 100 mm diameter Si wafers. The epitaxial Si layers grow from indium solutions. The thickness uniformity of the layers is better than +/-4. 9% within the central circular area of 90 mm in diameter. The layers s how smooth surfaces. The bulk of the layers is free of extended defect s and of solution inclusions. Hall effect measurements and transmissio n electron microscopic observations confirm the high quality of this e pitaxial material.