PROMINENT THERMALLY STIMULATED CURRENT TRAP IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS

Authors
FANG ZQ LOOK DC
Citation
Zq. Fang et Dc. Look, PROMINENT THERMALLY STIMULATED CURRENT TRAP IN LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS, Applied physics letters, 63(2), 1993, pp. 219-221
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
2
Year of publication
1993
Pages
219 - 221
Database
ISI
SICI code
0003-6951(1993)63:2<219:PTSCTI>2.0.ZU;2-4
Abstract
By far, the largest thermally stimulated current trap in molecular bea m epitaxial GaAs grown at 200-250-degrees-C is T5, with an activation energy of 0.27 eV and most likely related to V(Ga). After an anneal at 300-350-degrees-C, another trap T6star appears, with an activation en ergy of 0.14 eV and closely identified with V(As) or the complex, V(As )-As(Ga). Proposed defect reactions in this As-rich material include V (Ga) + As(As) --> V(As)-As(Ga), and V(Ga) + As(Ga) --> V(Ga)-As(Ga).