ANOMALOUS CARRIER LEVEL DEPENDENCE OF NORMAL RESISTIVITY OF LA2-XSRXCUO4

Authors
SUGAHARA M JIANG JF
Citation
M. Sugahara et Jf. Jiang, ANOMALOUS CARRIER LEVEL DEPENDENCE OF NORMAL RESISTIVITY OF LA2-XSRXCUO4, Applied physics letters, 63(2), 1993, pp. 255-256
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
2
Year of publication
1993
Pages
255 - 256
Database
ISI
SICI code
0003-6951(1993)63:2<255:ACLDON>2.0.ZU;2-J
Abstract
An experimental study is made concerning the dependence of normal resi stivity rho on hole-carrier level x' using carefully made La2-xSrCuO4 sintered specimens. Sharp dips are observed in the rho vs x' relation at the carrier levels x' = 1/4N (N = 1,2,3,....).