SAMPLE CURRENT MAXIMUM AT THE CRITICAL ANGLE OF X-RAY TOTAL-REFLECTION

The x-ray photoemitted electron intensity and sample current of a GaAs wafer are measured at 2 and 3 keV excitation photon energies while va rying the glancing angle of the incident x rays. It is found that the sample current and the x-ray photoemitted electron intensity have simi lar behavior with respect to the glancing angle. The sample current as well as the photoemission intensity have a maximum at the critical an gle of the x-ray total reflection. This is the first report of the obs ervation of the existence of a sample current maximum at the critical angle of x-ray total reflection.