GAINASP INP LOW-MESA CPBH SURFACE-EMITTING LASER WITH AN OPTIMALLY DEPOSITED MGO/SI MULTILAYER LASER MIRROR/

With an eye to high-temperature cw operation of GaInAsP/InP surface em itting lasers, we have introduced a low-mesa circular planar buried he terostructure for current confinement and a thermally conductive MgO/S i multilayer mirror for heat sinking. The deposition conditions of MgO were optimized to obtain a high mirror reflectivity of over 99%. The lasing operation of a 1.3 mum device loaded with these new materials w as demonstrated with a low threshold of 3.5 mA at 77 K under the cw co ndition.