OPTICAL AND ELECTRICAL-PROPERTIES OF P-GAAE DOPED WITH SB

Measurements of photoluminescence (PL) and Hall effect have been made on Sb-doped p-GaSe. The PL spectra at 77 K are dominated by two new em ission bands at 1.75 and 1.66 eV. The 1.66 emission band is enhanced b y adding Sb. The temperature dependences of the peak energy and the PL intensity of 1.66 eV emission band reveal that the acceptor level is located at 0. 09 eV above the valence band. The deep acceptor level lo cated at 0.57 eV above the valence band is detected by using Hall effe ct measurements. We found that the deep acceptor level is probably ass ociated with defects or defect complexes formed by Sb atoms in the int erlayer.