CHARACTERIZATION OF ULTRA-SHORT PULSED DISCHARGE PLASMA FOR CVD PROCESSING

Authors
MIZUNO A OKAZAKI K TAKEKOSHI T TOBE R
Citation
A. Mizuno et al., CHARACTERIZATION OF ULTRA-SHORT PULSED DISCHARGE PLASMA FOR CVD PROCESSING, IEEE transactions on industry applications, 29(3), 1993, pp. 656-660
Citations number
11
Categorie Soggetti
Engineering,"Engineering, Eletrical & Electronic
Journal title
IEEE transactions on industry applications → ACNP
ISSN journal
00939994
Volume
29
Issue
3
Year of publication
1993
Pages
656 - 660
Database
ISI
SICI code
0093-9994(1993)29:3<656:COUPDP>2.0.ZU;2-J
Abstract
Characteristics of pulsed discharge plasma of methane-hydrogen gas mix ture and Ar gas have been studied for active control of plasma chemica l vapor deposition (CVD) processing. Voltage-current characteristics, time-lag of the current pulse, and the photon emission intensity profi le have been investigated using high-voltage pulses of 50-1000 ns dura tion. In such a pulse discharge, voltages much higher than those in a dc glow discharge can be applied without any plasma nonuniformity or a rcing because voltage amplitude falls to zero before glow to arc trans ition. A current value of more than 10(3) times those in a glow discha rge can be established. Very high photon emission intensity from CH ra dicals and H ions have been observed near the anode in a pulsed plasma . This is different in dc plasma, where the negative glow region near the cathode is the brightest.