PICOSECOND INVESTIGATION OF PHOTOREFRACTIVE AND FREE-CARRIER GRATINGSIN GAAS-EL2 AND CDTE-V

Authors
DELAYE P JARASIUNAS K LAUNAY JC ROOSEN G
Citation
P. Delaye et al., PICOSECOND INVESTIGATION OF PHOTOREFRACTIVE AND FREE-CARRIER GRATINGSIN GAAS-EL2 AND CDTE-V, Journal de physique. III, 3(7), 1993, pp. 1291-1303
Citations number
27
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
7
Year of publication
1993
Pages
1291 - 1303
Database
ISI
SICI code
1155-4320(1993)3:7<1291:PIOPAF>2.0.ZU;2-7
Abstract
Laser induced picosecond transient gratings are used to study carrier transport via free carrier and photorefractive nonlinearities in semi- insulating undoped GaAs and vanadium doped CdTe crystals. Absorption a nd carrier generation mechanisms are investigated through the variatio n of grating strengths with input fluence. We show that grating decays are governed by mostly ambipolar diffusion and by its variation with fluence. Ambipolar mobilities are measured: mu(a) almost-equal-to 135 cm2.V-1.s-1 in CdTe and mu(a) almost-equal-to 760 cm2.V-1.S-1 in GaAs.