VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY

Authors
SAOUDI R HOLLINGER G GAGNAIRE A FERRET P PITAVAL M
Citation
R. Saoudi et al., VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 3(7), 1993, pp. 1479-1488
Citations number
21
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
3
Issue
7
Year of publication
1993
Pages
1479 - 1488
Database
ISI
SICI code
1155-4320(1993)3:7<1479:VTSDFT>2.0.ZU;2-N
Abstract
High Resolution cross-sectional Transmission Electron Microscopy (HRTE M), Spectroscopic ellipsometry and X-ray photoelectron spectroscopy (X PS) have been used conjointly to measure accurately the thickness of v ery thin SiO2 filMS (20-200 angstrom) of electronic quality. HRTEM has been used to calibrate both ellipsometry and XPS technics. A procedur e to measure the absolute oxide film-thicknesses has been defined for each of the three methods.